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FPD1500SOT89 - HIGH LINEARITY PACKAGED PHEMTT

FPD1500SOT89 Description

LOW NOISE, HIGH LINEARITY PACKAGED PHEMTT FPD1500SOT89 * PERFORMANCE (1850 MHz) * 27.5 dBm Output Power (P1dB) * 17 dB Smal.
AND APPLICATIONS The FPD1500SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT).

FPD1500SOT89 Features

* 0.0 0. 0. 8 1. 0 2. 0 3. 4. 5. 0 0 0 10 .0 0 0. 2 2 4 GHz 6 0. 1 GHz -10.0 -0.2 -5.0 -4.0 -0.4 0. 6 2. 0

FPD1500SOT89 Applications

* The FPD1500SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 x 1500 μm Schottky barrier Gate, defined by highresolution stepper-based photolithography. The recessed and offset Gate structure minimizes parasitics to optimize p

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Datasheet Details

Part number
FPD1500SOT89
Manufacturer
Filtronic
File Size
423.87 KB
Datasheet
FPD1500SOT89_Filtronic.pdf
Description
HIGH LINEARITY PACKAGED PHEMTT

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HIGH LINEARITY PACKAGED PHEMTT Filtronic
Filtronic FPD1500SOT89-like datasheet