FPD1500SOT89 Datasheet - Filtronic

FPD1500SOT89 - HIGH LINEARITY PACKAGED PHEMTT

AND APPLICATIONS The FPD1500SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT).

It utilizes a 0.25 x 1500 μm Schottky barrier Gate, defined by highresolution stepper-based photolithography.

The recessed and offset Gate structure minimizes parasit

FPD1500SOT89 Features

* 0.0 0. 0. 8 1. 0 2. 0 3. 4. 5. 0 0 0 10 .0 0 0. 2 2 4 GHz 6 0. 1 GHz -10.0 -0.2 -5.0 -4.0 -0.4 0. 6 2. 0

Datasheet Details

FPD1500SOT89

Filtronic

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High linearity packaged phemtt.

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