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FPD10000V

10W POWER PHEMT FOR WIMAX POWER AMPLIFIERS

FPD10000V Features

* Source thru-vias. 16 bonds each side, Gate and Drain. ¾ User must ensure that the die attach material is uniform and free of voiding underneath the die to ensure proper thermal heatsinking. A useful guideline is a 0.001

* 0.002 in. (0.025

* 0.050 mm) fillet of die attach material all

FPD10000V General Description

AND APPLICATIONS DIE SIZE (µm): 3750 x 750 DIE THICKNESS: 50µm BONDING PADS (µm): >70 x 60 SEE BONDING DIAGRAM BELOW

* The FPD10000V is a discrete depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), optimized for WiMAX (WMAN) IEEE 802.16 power amplifiers..

FPD10000V Datasheet (244.64 KB)

Preview of FPD10000V PDF

Datasheet Details

Part number:

FPD10000V

Manufacturer:

Filtronic

File Size:

244.64 KB

Description:

10w power phemt for wimax power amplifiers.
PRELIMINARY

* FPD10000V 10W POWER PHEMT FOR WIMAX POWER AMPLIFIERS PERFORMANCE (3.5 GHz) (802.16-2004 WiMAX Modulation)

* 30 dBm Ou.

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FPD10000V 10W POWER PHEMT FOR WIMAX POWER AMPLIFIERS Filtronic

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