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FPD7612P70 Datasheet - Filtronic Compound Semiconductors

FPD7612P70 HI-FREQUENCY PACKAGED PHEMT

AND APPLICATIONS The FPD7612P70 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 µm x 200 µm Schottky barrier Gate, defined by high-resolution stepper-based photolithography. . The FPD7612 is also available in die form . Typical a.

FPD7612P70_FiltronicCompoundSemiconductors.pdf

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Datasheet Details

Part number:

FPD7612P70

Manufacturer:

Filtronic Compound Semiconductors

File Size:

222.17 KB

Description:

Hi-frequency packaged phemt.

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FPD7612P70 FPD7612P70 HI-FREQUENCY PACKAGED PHEMT Filtronic Compound Semiconductors

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