Datasheet Specifications
- Part number
- FPD7612P70
- Manufacturer
- Filtronic Compound Semiconductors
- File Size
- 222.17 KB
- Datasheet
- FPD7612P70_FiltronicCompoundSemiconductors.pdf
- Description
- HI-FREQUENCY PACKAGED PHEMT
Description
PRELIMINARY * PERFORMANCE * 20 dBm Output Power (P1dB) * 21 dB Power Gain (G1dB) at 1.85 GHz * 0.7 dB Noise Figure at .
Applications
* The FPD7612P70 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 µm x 200 µm Schottky barrier Gate, defined by high-resolution stepper-based photolithography. . The FPD7612 is also available in die form . Typical applications incluFPD7612P70 Distributors
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