FPD7612P70 Datasheet - Filtronic Compound Semiconductors

FPD7612P70, HI-FREQUENCY PACKAGED PHEMT

PRELIMINARY * PERFORMANCE * 20 dBm Output Power (P1dB) * 21 dB Power Gain (G1dB) at 1.85 GHz * 0.7 dB Noise Figure at .
AND APPLICATIONS The FPD7612P70 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT).

datasheet Preview Page 1 from Datasheet4u.com

FPD7612P70_FiltronicCompoundSemiconductors.pdf

FPD7612P70 Datasheet Preview — Preview of FPD7612P70 PDF

Datasheet Details

Part number:

FPD7612P70

Manufacturer:

Filtronic Compound Semiconductors

File Size:

222.17 KB

Description:

HI-FREQUENCY PACKAGED PHEMT

Applications

* The FPD7612P70 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 µm x 200 µm Schottky barrier Gate, defined by high-resolution stepper-based photolithography. . The FPD7612 is also available in die form . Typical applications inclu

FPD7612P70 Distributors

📁 Related Datasheet

FPD03784 FPD10000AF FPD10000V FPD1000AS FPD1000V FPD1050

📌 All Tags

FPD7612P70 HI-FREQUENCY PACKAGED PHEMT Filtronic Compound Semiconductors

Filtronic Compound Semiconductors FPD7612P70-like datasheet