FPD7612P70 - HI-FREQUENCY PACKAGED PHEMT
AND APPLICATIONS The FPD7612P70 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT).
It utilizes a 0.25 µm x 200 µm Schottky barrier Gate, defined by high-resolution stepper-based photolithography.
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The FPD7612 is also available in die form .
Typical a
