FPD750 - 0.5W POWER PHEMT
The www.DataSheet4U.com FPD750 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.25 µm by 750 µm Schottky barrier gate, defined by highresolution stepper-based photolithography.
The double recessed gate structure minimizes parasitics to optimize performance.
