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FPD750 Datasheet - Filtronic Compound Semiconductors

FPD750 0.5W POWER PHEMT

The www.DataSheet4U.com FPD750 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.25 µm by 750 µm Schottky barrier gate, defined by highresolution stepper-based photolithography. The double recessed gate structure minimizes parasitics to optimize performance..

FPD750_FiltronicCompoundSemiconductors.pdf

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Datasheet Details

Part number:

FPD750

Manufacturer:

Filtronic Compound Semiconductors

File Size:

244.24 KB

Description:

0.5w power phemt.

FPD750 Distributor

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FPD750 FPD750 0.5W POWER PHEMT Filtronic Compound Semiconductors