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SHF-0189Z - 0.5WATT GaAs HFET

This page provides the datasheet information for the SHF-0189Z, a member of the SHF-0189 0.5WATT GaAs HFET family.

Datasheet Summary

Description

RFMD’s SHF-0189 is a high performance AIGaAs/GaAs Heterostructure FET (HFET) housed in a low-cost surface-mount plastic package.

The HFET technology improves breakdown voltage while minimizing Schottky leakage current resulting in higher PAE and improved linearity.

Features

  • Available in RFMD Green, RoHS Compliant, and Pb-Free (Z Part Number).
  • High Linearity Performance at 1.96 GHz +27dBm P1dB +40dBm Output IP3 +16.5dB Gain.
  • High Drain Efficiency.

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Datasheet preview – SHF-0189Z

Datasheet Details

Part number SHF-0189Z
Manufacturer RFMD
File Size 390.67 KB
Description 0.5WATT GaAs HFET
Datasheet download datasheet SHF-0189Z Datasheet
Additional preview pages of the SHF-0189Z datasheet.

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Full PDF Text Transcription

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SHF-0189(Z) 0.05Ghz to 6GHz, 0.5Watt GaAs HFET SHF-0189(Z) 0.05GHz to 6GHz, 0.5WATT GaAs HFET Package: SOT-89 Product Description RFMD’s SHF-0189 is a high performance AIGaAs/GaAs Heterostructure FET (HFET) housed in a low-cost surface-mount plastic package. The HFET technology improves breakdown voltage while minimizing Schottky leakage current resulting in higher PAE and improved linearity. Output power at 1dB compression for the SHF-0189 is +27dBm when biased for Class AB operation at 8V, 100mA. The +40dBm third order intercept makes it ideal for high dynamic range, high intercept point requirements.
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