BU64253GWZ Datasheet, Driver, ROHM

BU64253GWZ Features

• Driver
• Bi-directional Constant Current Driver
• 10 bit Resolution Current Control
• ISRC Mechanical Ringing Compensation
• 2-wire Serial Interface (I2C FAST-M

PDF File Details

Part number:

BU64253GWZ

Manufacturer:

ROHM ↗

File Size:

1.85MB

Download:

📄 Datasheet

Description:

Bi-directional vcm driver. The BU64253GWZ is designed to drive Bi-directional voice coil motors. Additionally the driver is able to source the output current wi

BU64253GWZ Application

• Applications
• Mobile Camera Module
• Bi-directional VCM Actuators Package UCSP30L1A(6pin) W (Typ) x D (Typ) x H (Max) 0.72 mm x 1

TAGS

BU64253GWZ

ROHM

📁 Related Datasheet

BU64241GWZ - Linear Constant Current VCM Driver (ROHM)
Datasheet Linear Constant Current VCM Driver BU64241GWZ ●General Description The BU64241GWZ is designed to drive voice coil motor (VCM). The driver .

BU64297GWZ - Bi-directional VCM driver (ROHM)
Bi-directional VCM driver for Auto focus BU64297GWZ General Description The BU64297GWZ are designed to drive Bi-directional voice coil motors. Additi.

BU64562GWZ - Piezoelectric Actuator Driver (ROHM)
Datasheet Piezoelectric Actuator Driver BU64562GWZ ●General Description The BU64562GWZ is designed to drive Piezo motors for camera auto focus. It h.

BU64985GWZ - Bi-directional VCM driver (ROHM)
Bi-directional VCM driver for Auto focus BU64985GWZ General Description The BU64985GWZ is designed to drive Bi-directional voice coil motors. Additio.

BU64987GWZ - Bi-directional VCM driver (ROHM)
Bi-directional VCM driver for Auto focus BU64987GWZ General Description The BU64987GWZ is designed to drive Bi-directional voice coil motors. Additio.

BU603 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 550V(Min) ·High Switching Speed ·Minimum Lot-to-Lot.

BU606 - Silicon NPN Power Transistor (Inchange Semiconductor)
isc Silicon NPN Power Transistor DESCRIPTION ·High Voltage: VCEV= 400V(Min) ·Fast Switching Speed- : tf= 0.75μs(Max) ·Low Saturation Voltage- : VCE(s.

BU606D - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor DESCRIPTION ·Fast Switching Speed- : tf= 0.75μs(Max) ·Low Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 5A ·Built-i.

BU607 - Silicon NPN Power Transistor (Inchange Semiconductor)
isc Silicon NPN Power Transistor DESCRIPTION ·High Voltage: VCEV= 330V(Min) ·Fast Switching Speed- : tf= 0.75μs(Max) ·Low Saturation Voltage- : VCE(s.

BU607D - Silicon NPN Power Transistor (Inchange Semiconductor)
isc Silicon NPN Power Transistor DESCRIPTION ·High Voltage: VCEV= 330V(Min) ·Fast Switching Speed- : tf= 0.75μs(Max) ·Low Saturation Voltage- : VCE(s.