Part number:
R6009JNJ
Manufacturer:
File Size:
1.45 MB
Description:
Power mosfet.
* 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant lOutline LPT(S) lInner circuit Datasheet lApplication Switching lPackaging specifications Packing Embossed Tape Packing code
R6009JNJ
1.45 MB
Power mosfet.
📁 Related Datasheet
R6009JND3 - Power MOSFET
(ROHM)
R6009JND3
Nch 600V 9A Power MOSFET
VDSS RDS(on)(Max.)
ID PD
600V 0.585Ω
±9A 125W
lFeatures
1) Fast reverse recovery time (trr) 2) Low on-resistan.
R6009JND3 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
R6009JND3
FEATURES ·Drain Current –ID=9A@ TC=25℃ ·Drain Source Voltage-
: VDSS=600V(Min) ·Static Drain-Source On-Res.
R6009JNJ - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
R6009JNJ
FEATURES ·Drain Current –ID=9A@ TC=25℃ ·Drain Source Voltage-
: VDSS=600V(Min) ·Static Drain-Source On-Resi.
R6009JNX - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
R6009JNX
FEATURES ·Drain Current –ID=9A@ TC=25℃ ·Drain Source Voltage-
: VDSS=600V(Min) ·Static Drain-Source On-Resi.
R6009JNX - Power MOSFET
(ROHM)
R6009JNX
Nch 600V 9A Power MOSFET
Datasheet
lOutline
VDSS
600V
TO-220FM
RDS(on)(Max.)
0.585Ω
ID
±9A
PD
53W
lFe.
R6009ENJ - Power MOSFET
(ROHM)
R6009ENJ
Nch 600V 9A Power MOSFET
Datasheet
VDSS
600V
lOutline
TO-263S
RDS(on)(Max.)
0.535Ω
SC-83
ID
±9A
LPT(S)
PD
lFeatures
94W
.
R6009ENJ - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
R6009ENJ
FEATURES ·Drain Current –ID= 9A@ TC=25℃ ·Drain Source Voltage-
: VDSS=600V(Min) ·Static Drain-Source On-Res.
R6009ENX - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
R6009ENX
FEATURES ·Drain Current –ID= 9A@ TC=25℃ ·Drain Source Voltage-
: VDSS=600V(Min) ·Static Drain-Source On-Res.
