- Part: R6009JNJ
- Description: Power MOSFET
- Category: MOSFET
- Manufacturer: ROHM
- Size: 1.45 MB
Key Features
- 8 A Avalanche energy, single pulse EAS*3 177 mJ Power dissipation (Tc = 25°C) PD 125 W Junction temperature Tj 150 ℃ Operating junction and storage temperature range Tstg -55 to +150 ℃ © 2019 ROHM Co., Ltd. All rights reserved. 1/11
Datasheets by Manufacturer
- R6009JNJ — Inchange Semiconductor — N-Channel MOSFET
- R6009JND3 — Inchange Semiconductor — N-Channel MOSFET
- R6009KNJ — Inchange Semiconductor — N-Channel MOSFET
- R6009ENX — Inchange Semiconductor — N-Channel MOSFET
- R6009KNX — Inchange Semiconductor — N-Channel MOSFET
- R6009ENJ — Inchange Semiconductor — N-Channel MOSFET
- MF-R600 — Bourns Electronic — Telecom PTC Resettable Fuses
- MF-R600 — Bourns Electronic — PTC Resettable Fuses
- R6006JNX — Inchange Semiconductor — N-Channel MOSFET
- R6006JNJ — Inchange Semiconductor — N-Channel MOSFET
