R8005ANX Datasheet, MOSFET, ROHM

R8005ANX Features

  • Mosfet 1) Low on-resistance. 800V 2.08 5A 51W
  • Outline TO-220FM
  • Inner circuit (1) (2) (3) 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V. 4

PDF File Details

Part number:

R8005ANX

Manufacturer:

ROHM ↗

File Size:

751.09kb

Download:

📄 Datasheet

Description:

Power mosfet.

Datasheet Preview: R8005ANX 📥 Download PDF (751.09kb)
Page 2 of R8005ANX Page 3 of R8005ANX

TAGS

R8005ANX
Power
MOSFET
ROHM

📁 Related Datasheet

R8005ANJ - Power MOSFET (ROHM)
R8005ANJ   Nch 800V 5A Power MOSFET VDSS RDS(on)(Max.) ID PD 800V 2.1Ω ±5A 120W lFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Paralle.

R8005ANJ - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor R8005ANJ FEATURES ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS=800V(Min) ·Static Drain-Source On-Res.

R8005ANJFRG - Power MOSFET (ROHM)
R8005ANJ FRG   Nch 800V 5A Power MOSFET    Datasheet VDSS RDS(on)(Max.) ID PD 800V 2.1Ω ±5A 120W lFeatures 1) Low on-resistance. 2) Fast switching.

R8005ANX - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220 packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to .

R8001CND - Power MOSFET (ROHM)
R8001CND   Nch 800V 1A Power MOSFET    Datasheet VDSS RDS(on)(Max.) ID PD 800V 8.7Ω ±1A 36W lFeatures 1) Low on-resistance. 2) Fast switching spee.

R8002ANJ - Power MOSFET (ROHM)
R8002ANJ   Nch 800V 2A Power MOSFET VDSS RDS(on)(Max.) ID PD 800V 4.3Ω ±2A 62W lFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Parallel.

R8002ANJ - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor R8002ANJ FEATURES ·Drain Current –ID= 24A@ TC=25℃ ·Drain Source Voltage- : VDSS=800V(Min) ·Static Drain-Source On-Re.

R8002ANJFRG - Power MOSFET (ROHM)
R8002ANJ FRG   Nch 800V 2A Power MOSFET    Datasheet VDSS RDS(on)(Max.) ID PD 800V 4.3Ω ±2A 62W lFeatures 1) Low on-resistance. 2) Fast switching .

R8002ANX - Power MOSFET (Rohm)
R8002ANX Nch 800V 2A Power MOSFET Datasheet VDSS RDS(on) (Max.) ID PD Features 1) Low on-resistance. 800V 4.3 2A 36W Outline TO-220FM Inner c.

R8002ANX - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor R8002ANX FEATURES ·Drain Current –ID= 2A@ TC=25℃ ·Drain Source Voltage- : VDSS=800V(Min) ·Static Drain-Source On-Res.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts