R8010ANX Datasheet, Mosfet, ROHM

R8010ANX Features

• Mosfet 1) Low on-resistance. 10A 40W lInner circuit (1) (2) (3) for 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V. d 4) Drive circuits can be simple. e 5) P

PDF File Details

Part number:

R8010ANX

Manufacturer:

ROHM ↗

File Size:

872.68kb

Download:

📄 Datasheet

Description:

Power mosfet.

TAGS

R8010ANX

ROHM

📁 Related Datasheet

R8010ANX - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor R8010ANX FEATURES ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS=800V(Min) ·Static Drain-Source On-Re.

R80186 - High Integration 16 Bit Microprocessors (AMD)
.

R80186 - High Integration 16 Bit Microprocessors (Intel)
.

R8001CND - Power MOSFET (ROHM)
R8001CND 　　Nch 800V 1A Power MOSFET 　　 Datasheet VDSS RDS(on)(Max.) ID PD 800V 8.7Ω ±1A 36W lFeatures 1) Low on-resistance. 2) Fast switching spee.

R8002ANJ - Power MOSFET (ROHM)
R8002ANJ 　　Nch 800V 2A Power MOSFET VDSS RDS(on)(Max.) ID PD 800V 4.3Ω ±2A 62W lFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Parallel.

R8002ANJ - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor R8002ANJ FEATURES ·Drain Current –ID= 24A@ TC=25℃ ·Drain Source Voltage- : VDSS=800V(Min) ·Static Drain-Source On-Re.

R8002ANJFRG - Power MOSFET (ROHM)
R8002ANJ FRG 　　Nch 800V 2A Power MOSFET 　　 Datasheet VDSS RDS(on)(Max.) ID PD 800V 4.3Ω ±2A 62W lFeatures 1) Low on-resistance. 2) Fast switching .

R8002ANX - Power MOSFET (Rohm)
R8002ANX Nch 800V 2A Power MOSFET Datasheet VDSS RDS(on) (Max.) ID PD Features 1) Low on-resistance. 800V 4.3 2A 36W Outline TO-220FM Inner c.

R8002ANX - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor R8002ANX FEATURES ·Drain Current –ID= 2A@ TC=25℃ ·Drain Source Voltage- : VDSS=800V(Min) ·Static Drain-Source On-Res.

R8002CND - Power MOSFET (ROHM)
R8002CND 　　Nch 800V 2A Power MOSFET 　　 Datasheet NotNeRewcDoemsimgennsded for VDSS RDS(on)(Max.) ID PD 800V 4.3Ω ±2A 69W lFeatures 1) Low on-resi.