ROHM manufacturer logo Part number: RJP020N06FRA Manufacturer: ROHM ↗ File Size: 2.47MB Download: 📄 Datasheet Description: Power mosfet.
RJP020N06 - Drive Nch MOS FET (Rohm) .. RJP020N06 Transistors 2.5V Drive Nch MOS FET RJP020N06 zStructure Silicon N-channel MOS FET zExternal dimensions (Unit : mm) MPT.
RJP020N06T100 - N-Channel MOSFET (VBsemi) RJP020N06T100 N-Channel 60-V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.076 at VGS = 10 V 60 0.088 at VGS = 4.5 V ID (A)a.
RJP1CS03DWA - IGBT (Renesas) Preliminary Datasheet RJP1CS03DWT/RJP1CS03DWA 1250V - 30A - IGBT Application: Inverter Features Low collector to emitter saturation voltage VCE(sat.
RJP1CS03DWT - IGBT (Renesas) Preliminary Datasheet RJP1CS03DWT/RJP1CS03DWA 1250V - 30A - IGBT Application: Inverter Features Low collector to emitter saturation voltage VCE(sat.
RJP1CS04DWA - IGBT (Renesas) Preliminary Datasheet RJP1CS04DWT/RJP1CS04DWA 1250V - 50A - IGBT Application: Inverter Features Low collector to emitter saturation voltage VCE(sat.
RJP1CS04DWT - IGBT (Renesas) Preliminary Datasheet RJP1CS04DWT/RJP1CS04DWA 1250V - 50A - IGBT Application: Inverter Features Low collector to emitter saturation voltage VCE(sat.
RJP1CS05DWA - IGBT (Renesas) Preliminary Datasheet RJP1CS05DWT/RJP1CS05DWA 1250V - 75A - IGBT Application: Inverter Features Low collector to emitter saturation voltage VCE(sat.
RJP1CS05DWT - IGBT (Renesas) Preliminary Datasheet RJP1CS05DWT/RJP1CS05DWA 1250V - 75A - IGBT Application: Inverter Features Low collector to emitter saturation voltage VCE(sat.
RJP1CS06DWA - IGBT (Renesas) Preliminary Datasheet RJP1CS06DWT/RJP1CS06DWA Silicon N Channel IGBT Application: Inverter Features Low collector to emitter saturation voltage VCE.
RJP1CS06DWT - IGBT (Renesas) Preliminary Datasheet RJP1CS06DWT/RJP1CS06DWA Silicon N Channel IGBT Application: Inverter Features Low collector to emitter saturation voltage VCE.
