RJP1CS04DWT Datasheet - Renesas

RJP1CS04DWT IGBT

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RJP1CS04DWT Features

* Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C)

* High speed switching

* Short circuit withstands time (10 s min.) R07DS0827EJ0004 Rev.0.04 Jun 05, 2012 Outline Die: RJP1CS04DWT-80 2 C 3 1G 1 Wafer: RJP1CS04DWA-80 2 1. Gate

RJP1CS04DWT_Renesas.pdf