RJP1CS03DWT Datasheet - Renesas

RJP1CS03DWT - IGBT

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You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment.

Renesa

RJP1CS03DWT Features

* Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25C)

* High speed switching

* Short circuit withstands time (10 s min.) R07DS0826EJ0001 Rev.0.01 Jul 03, 2012 Outline Die: RJP1CS03DWT-80 2 C 3 1G 1 Wafer: RJP1CS03DWA-80 2 1. Gate 2

RJP1CS03DWT_Renesas.pdf

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Datasheet Details

Part number:

RJP1CS03DWT

Manufacturer:

Renesas ↗

File Size:

129.33 KB

Description:

Igbt.

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RJP1CS03DWT IGBT Renesas