RJP1CS05DWT Datasheet - Renesas

RJP1CS05DWT IGBT

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RJP1CS05DWT Features

* Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 75 A, VGE = 15 V, Ta = 25C)

* High speed switching

* Short circuit withstands time (10 s min.) R07DS0828EJ0001 Rev.0.01 Jul 05, 2012 Outline Die: RJP1CS05DWT-80 2 C 3 Wafer: RJP1CS05DWA-80 2 1G 1 3 1.

RJP1CS05DWT Datasheet (129.35 KB)