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S6307 SiC Schottky Barrier Diode

S6307 Description

S6307 SiC Schottky Barrier Diode VR 1200V IF 30A *1 QC 82nC *.

S6307 Features

* 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible
* Inner Circuit
* Construction Silicon carbide epitaxial planar type Schottky diode Datasheet
* Absolute Maximum Ratings (Tj = 25°C ) Parameter Symbol Value Reverse voltage (repetitive peak)

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Datasheet Details

Part number
S6307
Manufacturer
ROHM ↗
File Size
946.86 KB
Datasheet
S6307-ROHM.pdf
Description
SiC Schottky Barrier Diode

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SiC Schottky Barrier Diode ROHM
ROHM S6307-like datasheet