4P30
Rectron
235.67kb
P-ch 30v fast switching mosfet. The RM4P30S6 is the high cell density trenched P-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small powe
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4P50 - P-CHANNEL POWER MOSFET
(UTC)
UNISONIC TECHNOLOGIES CO., LTD 4P50
-4.0A, -500V P-CHANNEL POWER MOSFET
DESCRIPTION
The 4P50 uses advanced proprietary, planar stripe, DMOS technolo.
4PT06A-03 - Sensitive gate SCRs
(nELL)
SEMICONDUCTOR
4PT Series RRooHHSS
Sensitive gate SCRs, 4A
Main Features
Symbol IT(RMS) VDRM/VRRM
IGT
Value 4
600 to 800 10 to 200
Unit A V µA
A
.
4PT06A-05 - Sensitive gate SCRs
(nELL)
SEMICONDUCTOR
4PT Series RRooHHSS
Sensitive gate SCRs, 4A
Main Features
Symbol IT(RMS) VDRM/VRRM
IGT
Value 4
600 to 800 10 to 200
Unit A V µA
A
.
4PT06A-06 - Sensitive gate SCRs
(nELL)
SEMICONDUCTOR
4PT Series RRooHHSS
Sensitive gate SCRs, 4A
Main Features
Symbol IT(RMS) VDRM/VRRM
IGT
Value 4
600 to 800 10 to 200
Unit A V µA
A
.
4PT06A-08 - Sensitive gate SCRs
(nELL)
SEMICONDUCTOR
4PT Series RRooHHSS
Sensitive gate SCRs, 4A
Main Features
Symbol IT(RMS) VDRM/VRRM
IGT
Value 4
600 to 800 10 to 200
Unit A V µA
A
.
4PT06A-S - Sensitive gate SCRs
(nELL)
SEMICONDUCTOR
4PT Series RRooHHSS
Sensitive gate SCRs, 4A
Main Features
Symbol IT(RMS) VDRM/VRRM
IGT
Value 4
600 to 800 10 to 200
Unit A V µA
A
.
4PT06AI-03 - Sensitive gate SCRs
(nELL)
SEMICONDUCTOR
4PT Series RRooHHSS
Sensitive gate SCRs, 4A
Main Features
Symbol IT(RMS) VDRM/VRRM
IGT
Value 4
600 to 800 10 to 200
Unit A V µA
A
.
4PT06AI-05 - Sensitive gate SCRs
(nELL)
SEMICONDUCTOR
4PT Series RRooHHSS
Sensitive gate SCRs, 4A
Main Features
Symbol IT(RMS) VDRM/VRRM
IGT
Value 4
600 to 800 10 to 200
Unit A V µA
A
.
4PT06AI-06 - Sensitive gate SCRs
(nELL)
SEMICONDUCTOR
4PT Series RRooHHSS
Sensitive gate SCRs, 4A
Main Features
Symbol IT(RMS) VDRM/VRRM
IGT
Value 4
600 to 800 10 to 200
Unit A V µA
A
.
4PT06AI-08 - Sensitive gate SCRs
(nELL)
SEMICONDUCTOR
4PT Series RRooHHSS
Sensitive gate SCRs, 4A
Main Features
Symbol IT(RMS) VDRM/VRRM
IGT
Value 4
600 to 800 10 to 200
Unit A V µA
A
.