RM20N150LD Datasheet (Rectron) - N-Channel Super Trench Power MOSFET

RM20N150LD, N-Channel Super Trench Power MOSFET

The RM20N150LD uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

This device is ideal for high-frequency switc

RM20N150LD Features

* VDS =150V,ID =20A RDS(ON)=59mΩ (typical) @ VGS=10V

* Excellent gate charge x RDS(on) product(FOM)

* Very low on-resistance RDS(on)

* 175 °C operating temperature

* Pb-free lead plating

* 100% UIS tested Schematic diagram D S G TO-252 -2Ltop view Application

* LED back