RM20N150LD - N-Channel Super Trench Power MOSFET

Rectron

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Datasheet Details

Part number	RM20N150LD
Manufacturer	Rectron
File Size	264.58 KB
Description	N-Channel Super Trench Power MOSFET
Datasheet	RM20N150LD-Rectron.pdf

RM20N150LD Product details

Description

The RM20N150LD uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.This device is ideal for high-frequency switching and synchronous rectification.General

Features

VDS =150V,ID =20A RDS(ON)=59mΩ (typical) @ VGS=10V.
Excellent gate charge x RDS(on) product(FOM).
Very low on-resistance RDS(on).
175 °C operating temperature.
Pb-free lead plating.
100% UIS tested Schematic diagram D S G TO-252 -2Ltop view.

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Published: Dec 19, 2024 |