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HAT2279H Silicon N-Channel Power MOSFET

HAT2279H Description

HAT2279H Silicon N Channel Power MOS FET Power Switching .

HAT2279H Features

* High speed switching
* Capable of 4.5 V gate drive
* Low drive current
* High density mounting
* Low on-resistance RDS(on) = 9.5 mΩ typ. (at VGS = 10 V)
* Lead Free Outline RENESAS Package code: PTZZ0005DA-A) (Package name: LFPAK ) 5 D 5 1 234 4 G

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Silicon N-Channel Power MOSFET Renesas Technology
Renesas Technology HAT2279H-like datasheet