RJE0601JPE Datasheet (Renesas Technology) - Silicon P Channel MOS FET Series Power Switching

RJE0601JPE, Silicon P Channel MOS FET Series Power Switching

This FET has the over temperature shut-down capability sensing to the junction temperature.

This FET has the built-in over temperature shut-down circuit in the gate area.

And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumptio

RJE0601JPE Features

* High endurance capability against to the short circuit. Built-in the over temperature shut-down circuit. Latch type shut down operation (need 0 voltage recovery). Built-in the current limitation circuit. Low on-resistance RDS: 22 m Typ, 27 m Max (VGS =

* 10 V)