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RJE0609JPD Datasheet - Renesas Technology

RJE0609JPD_RenesasTechnology.pdf

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Datasheet Details

Part number:

RJE0609JPD

Manufacturer:

Renesas ↗ Technology

File Size:

105.20 KB

Description:

P-channel mosfet.

RJE0609JPD, P-Channel MOSFET

This FET has the over temperature shut-down capability sensing to the junction temperature.

This FET has the built-in over temperature shut-down circuit in the gate area.

And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumptio

RJE0609JPD Features

* Logic level operation (

* 6 V Gate drive). Built-in the over temperature shut-down circuit. High endurance capability against to the short circuit. Latch type shut down operation (need 0 voltage recovery). Built-in the current limitation circuit. Low on-resi

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