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RJE0609JPD

P-Channel MOSFET

RJE0609JPD Features

* Logic level operation (

* 6 V Gate drive). Built-in the over temperature shut-down circuit. High endurance capability against to the short circuit. Latch type shut down operation (need 0 voltage recovery). Built-in the current limitation circuit. Low on-resi

RJE0609JPD General Description

This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumptio.

RJE0609JPD Datasheet (105.20 KB)

Preview of RJE0609JPD PDF

Datasheet Details

Part number:

RJE0609JPD

Manufacturer:

Renesas ↗ Technology

File Size:

105.20 KB

Description:

P-channel mosfet.

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TAGS

RJE0609JPD P-Channel MOSFET Renesas Technology

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