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RJE0605JPD Datasheet - Renesas Technology

RJE0605JPD Silicon P Channel MOS FET Series Power Switching

This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumptio.

RJE0605JPD Features

* Logic level operation (

* 6 V Gate drive). Built-in the over temperature shut-down circuit. High endurance capability against to the short circuit. Latch type shut down operation (need 0 voltage recovery). Built-in the current limitation circuit. Low on-resi

RJE0605JPD Datasheet (107.28 KB)