Datasheet4U Logo Datasheet4U.com

RJE0605JPD Datasheet - Renesas Technology

RJE0605JPD_RenesasTechnology.pdf

Preview of RJE0605JPD PDF
RJE0605JPD Datasheet Preview Page 2 RJE0605JPD Datasheet Preview Page 3

Datasheet Details

Part number:

RJE0605JPD

Manufacturer:

Renesas ↗ Technology

File Size:

107.28 KB

Description:

Silicon p channel mos fet series power switching.

RJE0605JPD, Silicon P Channel MOS FET Series Power Switching

This FET has the over temperature shut-down capability sensing to the junction temperature.

This FET has the built-in over temperature shut-down circuit in the gate area.

And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumptio

RJE0605JPD Features

* Logic level operation (

* 6 V Gate drive). Built-in the over temperature shut-down circuit. High endurance capability against to the short circuit. Latch type shut down operation (need 0 voltage recovery). Built-in the current limitation circuit. Low on-resi

📁 Related Datasheet

📌 All Tags

Renesas Technology RJE0605JPD-like datasheet