* High endurance capability against to the short circuit.
* Built-in the over temperature shut-down circuit.
* Latch type shut down operation (need 0 voltage recovery).
* Built-in the current limitation circuit.
* Low on-resistance RDS(on) : 140 m Typ, 260 m Max (VGS =
RJE0607JSP Datasheet (95.46 KB)
RJE0607JSP
Renesas ↗ Technology
95.46 KB
P-channel mosfet.
RJE0607JSP
Silicon P Channel MOS FET Series Power Switching
Preliminary Datasheet
R07DS0123EJ0200 (Previous: REJ03G1876-0100)
Rev.2.00 Sep 01, 2010
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