RJE0607JSP Datasheet - Renesas Technology

RJE0607JSP P-Channel MOSFET

This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumptio.

RJE0607JSP Features

* High endurance capability against to the short circuit.

* Built-in the over temperature shut-down circuit.

* Latch type shut down operation (need 0 voltage recovery).

* Built-in the current limitation circuit.

* Low on-resistance RDS(on) : 140 m Typ, 260 m Max (VGS =

RJE0607JSP Datasheet (95.46 KB)