RJE0607JSP Datasheet (Renesas Technology)

RJE0607JSP, P-Channel MOSFET

This FET has the over temperature shut-down capability sensing to the junction temperature.

This FET has the built-in over temperature shut-down circuit in the gate area.

And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumptio

RJE0607JSP Features

* High endurance capability against to the short circuit.

* Built-in the over temperature shut-down circuit.

* Latch type shut down operation (need 0 voltage recovery).

* Built-in the current limitation circuit.

* Low on-resistance RDS(on) : 140 m Typ, 260 m Max (VGS =