RJE0615JSP Datasheet (Renesas Technology)

RJE0615JSP, P-Channel MOSFET

R07DS0124EJ0200 (Previous: REJ03G1943-0100) Rev.2.00 Sep 01, 2010 This FET has the over temperature shut-down capability sensing to the junction temperature.

This FET has the built-in over temperature shut-down circuit in the gate area.

And this circuit operation to shut-down the gate voltage in c

RJE0615JSP Features

* Built-in the over temperature shut-down circuit. High endurance capability against to the short circuit. Latch type shut down operation (need 0 voltage recovery). Built-in the current limitation circuit. Low on-resistance RDS(on) : 53 m Typ, 65 m Max (VGS =