RJE0615JSP Datasheet - Renesas Technology

RJE0615JSP P-Channel MOSFET

R07DS0124EJ0200 (Previous: REJ03G1943-0100) Rev.2.00 Sep 01, 2010 This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in c.

RJE0615JSP Features

* Built-in the over temperature shut-down circuit. High endurance capability against to the short circuit. Latch type shut down operation (need 0 voltage recovery). Built-in the current limitation circuit. Low on-resistance RDS(on) : 53 m Typ, 65 m Max (VGS =

RJE0615JSP Datasheet (116.15 KB)