RJH60D7DPK Datasheet - Renesas Technology

RJH60D7DPK - IGBT

RJH60D7DPK Features

* Short circuit withstand time (5 s typ.)

* Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)

* Built in fast recovery diode (100 ns typ.) in one package

* Trench gate and thin wafer technology

* High speed switching tf = 50

Datasheet Details

RJH60D7DPK

95.33 KB

Igbt.

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