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RJH60D7DPK - IGBT

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Renesas Technology

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RJH60D7DPK IGBT by Renesas Technology - Datasheet Preview — Datasheet preview – RJH60D7DPK

Datasheet Details

Part number	RJH60D7DPK
Manufacturer	Renesas Technology
File Size	95.33 KB
Description	IGBT
Datasheet	RJH60D7DPK Datasheet
Additional preview pages of the RJH60D7DPK datasheet.

Product details

Features

Short circuit withstand time (5 s typ. ).
Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C).
Built in fast recovery diode (100 ns typ. ) in one package.
Trench gate and thin wafer technology.
High speed switching tf = 50 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 50 A, Rg = 5 , Ta = 25°C, inductive load) Outline.

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Published: Feb 18, 2010 |