RJH60D7DPM Datasheet, igbt equivalent, Renesas

RJH60D7DPM Features

• Igbt
• Short circuit withstand time (5 s typ.)
• Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)
• Built in f

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RJH60D7DPM

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Renesas ↗

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165.24kb

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📄 Datasheet

Description:

Igbt.

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RJH60D7DPM

Renesas

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