Datasheet4U Logo Datasheet4U.com

RJH60D7DPM IGBT

RJH60D7DPM Description

Preliminary Datasheet RJH60D7DPM 600V - 50A - IGBT Application: Inverter .

RJH60D7DPM Features

* Short circuit withstand time (5 s typ. )
* Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)
* Built in fast recovery diode (100 ns typ. ) in one package
* Trench gate and thin wafer technology
* High speed switching tf = 50

📥 Download Datasheet

Preview of RJH60D7DPM PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • RJH60D7DPK - IGBT (Renesas Technology)
  • RJH60D0DPK - Silicon N Channel IGBT (Renesas Technology)
  • RJH60D1DPE - Silicon N Channel IGBT (Renesas Technology)
  • RJH60D1DPP-M0 - Silicon N-Channel IGBT (Renesas Technology)
  • RJH60D2DPE - Silicon N Channel IGBT (Renesas Technology)
  • RJH60D2DPP-M0 - Silicon N Channel IGBT (Renesas Technology)
  • RJH60D3DPE - Silicon N Channel IGBT (Renesas Technology)
  • RJH60D5DPK - Silicon N Channel IGBT (Renesas Technology)

📌 All Tags

IGBT Renesas
Renesas RJH60D7DPM-like datasheet