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RJH60D7DPM - IGBT

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Renesas

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RJH60D7DPM IGBT by Renesas - Datasheet Preview — Datasheet preview – RJH60D7DPM

Datasheet Details

Part number	RJH60D7DPM
Manufacturer	Renesas
File Size	165.24 KB
Description	IGBT
Datasheet	RJH60D7DPM Datasheet
Additional preview pages of the RJH60D7DPM datasheet.

Product details

Features

Short circuit withstand time (5 s typ. ).
Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C).
Built in fast recovery diode (100 ns typ. ) in one package.
Trench gate and thin wafer technology.
High speed switching tf = 50 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 50 A, Rg = 5 , Ta = 25°C, inductive load) R07DS0176EJ0300 Rev.3.00 Apr 19, 2012 Outline.

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Published: Jul 20, 2012 |