RJK0222DNS Datasheet, Fet, Renesas Technology

RJK0222DNS Features

• Fet
• Low on-resistance
• Capable of 4.5 V gate drive
• High density mounting
• Pb-free
• Halogen-free Outline RENESAS Package code: PWSN0008JD-A (

PDF File Details

Part number:

RJK0222DNS

Manufacturer:

Renesas ↗ Technology

File Size:

318.44kb

Download:

📄 Datasheet

Description:

Silicon n channel power mos fet.

TAGS

RJK0222DNS

Renesas Technology

📁 Related Datasheet

RJK0223DNS - Silicon N Channel Power MOS FET (Renesas Technology)
Preliminary Datasheet RJK0223DNS Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching R07DS0126EJ0110 Rev1.10 M.

RJK0226DNS - Silicon N Channel Power MOS FET (Renesas Technology)
Preliminary Datasheet RJK0226DNS Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching R07DS0260EJ0110 Rev.1.10 Mar 03, 20.

RJK0204DPA - Silicon N Channel Power MOS FET (Renesas Technology)
Preliminary .. Datasheet RJK0204DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1922-0210 Power Switching Rev..

RJK0206DPA - Silicon N Channel Power MOS FET (Renesas Technology)
Preliminary .. Datasheet RJK0206DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1923-0200 Power Switching Rev..

RJK0208DPA - Silicon N Channel Power MOS FET (Renesas Technology)
Preliminary .. Datasheet RJK0208DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1924-0200 Power Switching Rev..

RJK0210DPA - N-Channel MOSFET (Renesas Technology)
Preliminary Datasheet RJK0210DPA Silicon N Channel Power MOS FET Power Switching Features      Very high speed switching Capable of 4.5 V gate d.

RJK0211DPA - N-Channel MOSFET (Renesas Technology)
Preliminary Datasheet RJK0211DPA Silicon N Channel Power MOS FET Power Switching Features      Very high speed switching Capable of 4.5 V gate d.

RJK0212DPA - N-Channel MOSFET (Renesas Technology)
Preliminary Datasheet RJK0212DPA Silicon N Channel Power MOS FET Power Switching Features Very high speed switching Capable of 4.5 V gate drive Low d.

RJK0213DPA - Silicon N Channel Power MOS FET (Renesas Technology)
Preliminary .. Datasheet RJK0213DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1942-0100 Power Switching Rev..

RJK0214DPA - Silicon N Channel Power MOS FET (Renesas Technology)
Preliminary Datasheet RJK0214DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching R07DS0206EJ0110 Rev.1.10 .