* Low on-resistance
* Capable of 4.5 V gate drive
* High density mounting
* Pb-free
* Halogen-free Outline RENESAS Package code: PWSN0008JD-A (Package: HWSON3046-8) 5678 234 D1 D1 D1 9 S1/D2 5678 4321 1 G1 MOS1 8 G2 9 1, 8 Gate 2, 3, 4, 9 Drain 5, 6, 7, 9 Source S2 S2
RJK0223DNS Datasheet (324.67 KB)
RJK0223DNS
Renesas ↗ Technology
324.67 KB
Silicon n channel power mos fet.
Preliminary Datasheet
RJK0223DNS
Silicon N Channel Power MOS FET with Schottky Barrier Diode
High Speed Power Switching
R07DS0126EJ0110 Rev1.10
M.
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