RJK0226DNS - Silicon N Channel Power MOS FET

Product Overview

Renesas Technology

Datasheet Details

Part number	RJK0226DNS
Manufacturer	Renesas Technology
File Size	242.79 KB
Description	Silicon N Channel Power MOS FET
Datasheet	RJK0226DNS Datasheet
Additional preview pages of the RJK0226DNS datasheet.

Product details

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

Features

High speed switching.
Capable of 4.5 V gate drive.
Low drive current.
High density mounting.
Low on-resistance RDS(on) = 2.3 m typ. (at VGS = 8 V).
Pb-free.
Halogen-free Outline Package name: 8pin HVSON(3333) 5 6 78 4 321 4 G 5 678 D DDD 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S SS 1 23 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Ava.

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Published: Aug 16, 2015 |