RJK0226DNS Datasheet (Renesas Technology) - Silicon N Channel Power MOS FET

RJK0226DNS, Silicon N Channel Power MOS FET

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Renesa

RJK0226DNS Features

* High speed switching

* Capable of 4.5 V gate drive

* Low drive current

* High density mounting

* Low on-resistance RDS(on) = 2.3 m typ. (at VGS = 8 V)

* Pb-free

* Halogen-free Outline Package name: 8pin HVSON(3333) 5 6 78 4 321 4 G 5 678 D DDD 1, 2, 3 Source 4 Gate