RJK0226DNS Datasheet - Renesas Technology

Silicon N Channel Power MOS FET

RJK0226DNS Features

* High speed switching

* Capable of 4.5 V gate drive

* Low drive current

* High density mounting

* Low on-resistance RDS(on) = 2.3 m typ. (at VGS = 8 V)

* Pb-free

* Halogen-free Outline Package name: 8pin HVSON(3333) 5 6 78 4 321 4 G 5 678 D DDD 1, 2, 3 Source 4 Gate

RJK0226DNS General Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesa.

RJK0226DNS Datasheet (242.79 KB)

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Datasheet Details

Part number:

RJK0226DNS

Manufacturer:

Renesas ↗ Technology

File Size:

242.79 KB

Description:

Silicon n channel power mos fet.
Preliminary Datasheet RJK0226DNS Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching R07DS0260EJ0110 Rev.1.10 Mar 03, 20.

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RJK0226DNS Silicon Channel Power MOS FET Renesas Technology

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RJK0226DNS Features

RJK0226DNS General Description

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