RJK0226DNS Silicon N Channel Power MOS FET

Renesas Technology

Description

Preliminary Datasheet RJK0226DNS Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching R07DS0260EJ0110 Rev.1.10 Mar 03, 20.
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

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Datasheet Specifications

Part number: RJK0226DNS
Manufacturer: Renesas ↗ Technology
File Size: 242.79 KB
Datasheet: RJK0226DNS-RenesasTechnology.pdf
Description: Silicon N Channel Power MOS FET

Features

* High speed switching
* Capable of 4.5 V gate drive
* Low drive current
* High density mounting
* Low on-resistance RDS(on) = 2.3 m typ. (at VGS = 8 V)
* Pb-free
* Halogen-free Outline Package name: 8pin HVSON(3333) 5 6 78 4 321 4 G 5 678 D DDD 1, 2, 3 Source 4 Gate

Applications

* or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign law

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RJK0226DNS Silicon Channel Power MOS FET Renesas Technology

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