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RJK03B7DPA

Silicon N Channel Power MOS FET Power Switching

RJK03B7DPA Features

* High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 6.0 m typ. (at VGS = 10 V)

* Pb-free

* Halogen-free

* REJ03G1789-0210 Rev.2.10 May 12, 2010 Outline RENESAS Package code: PWSN0008DC-A (Package n

RJK03B7DPA General Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesa.

RJK03B7DPA Datasheet (110.18 KB)

Preview of RJK03B7DPA PDF

Datasheet Details

Part number:

RJK03B7DPA

Manufacturer:

Renesas ↗ Technology

File Size:

110.18 KB

Description:

Silicon n channel power mos fet power switching.

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RJK03B7DPA Silicon Channel Power MOS FET Power Switching Renesas Technology

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