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RJK03B8DPA Silicon N Channel Power MOS FET Power Switching

RJK03B8DPA Description

Preliminary Datasheet RJK03B8DPA Silicon N Channel Power MOS FET Power Switching .
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

RJK03B8DPA Features

* High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 7.2 m typ. (at VGS = 10 V)
* Pb-free
* Halogen-free
* REJ03G1790-0210 Rev.2.10 May 12, 2010 Outline RENESAS Package code: PWSN0008DC-A (Package n

RJK03B8DPA Applications

* or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign law

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Silicon Channel Power MOS FET Power Switching Renesas Technology
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