RJK03M7DPA

Silicon N-Channel MOSFET

Renesas Technology

RJK03M7DPA Features

* High speed switching

* Capable of 4.5 V gate drive

* Low drive current

* High density mounting

* Low on-resistance RDS(on) = 8.0 m typ. (at VGS = 10 V)

* Pb-free

* Halogen-free Outline Preliminary Datasheet R07DS0773EJ0110 Rev.1.10 Feb 22, 2012 RENESAS Package code:

RJK03M7DPA General Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesa.

RJK03M7DPA Datasheet (225.20 KB)