RJK03M8DNS

Silicon N Channel Power MOS FET

Renesas Technology

RJK03M8DNS Features

* High speed switching

* Capable of 4.5 V gate drive

* Low drive current

* High density mounting

* Low on-resistance RDS(on) = 4.3 m typ. (at VGS = 10 V)

* Pb-free

* Halogen-free Outline RENESAS Package code: PWSN0008JB-A (Package name: HWSON-8) 5 6 78 5 678 D DDD 4 32

RJK03M8DNS General Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesa.

RJK03M8DNS Datasheet (233.40 KB)