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RJK03M8DNS Silicon N Channel Power MOS FET

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Description

RJK03M8DNS Silicon N Channel Power MOS FET Power Switching Preliminary Datasheet R07DS0774EJ0110 Rev.1.10 May 29, 2012 .
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

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Features

* High speed switching
* Capable of 4.5 V gate drive
* Low drive current
* High density mounting
* Low on-resistance RDS(on) = 4.3 m typ. (at VGS = 10 V)
* Pb-free
* Halogen-free Outline RENESAS Package code: PWSN0008JB-A (Package name: HWSON-8) 5 6 78 5 678 D DDD 4 32

Applications

* for each Renesas Electronics product depends on the product's quality grade, as indicated below. "Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; an

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