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RJK03M9DNS Silicon N Channel Power MOS FET

RJK03M9DNS Description

RJK03M9DNS Silicon N Channel Power MOS FET Power Switching .
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

RJK03M9DNS Features

* High speed switching
* Capable of 4.5 V gate drive
* Low drive current
* High density mounting
* Low on-resistance RDS(on) = 9.2 m typ. (at VGS = 10 V)
* Pb-free
* Halogen-free Outline RENESAS Package code: PWSN0008JB-A (Package name: HWSON-8) 5 6 78 Preliminary Datas

RJK03M9DNS Applications

* for each Renesas Electronics product depends on the product's quality grade, as indicated below. "Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; an

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Silicon Channel Power MOS FET Renesas Technology
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