RJK03M9DNS Datasheet (Renesas Technology) - Silicon N Channel Power MOS FET

RJK03M9DNS, Silicon N Channel Power MOS FET

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Renesa

RJK03M9DNS Features

* High speed switching

* Capable of 4.5 V gate drive

* Low drive current

* High density mounting

* Low on-resistance RDS(on) = 9.2 m typ. (at VGS = 10 V)

* Pb-free

* Halogen-free Outline RENESAS Package code: PWSN0008JB-A (Package name: HWSON-8) 5 6 78 Preliminary Datas