RJK0652DPB - Silicon N Channel Power MOS FET
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You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment.
Renesa
RJK0652DPB Features
* High speed switching
* Capable of 4.5 V gate drive
* Low drive current
* High density mounting
* Low on-resistance RDS(on) = 5.5 m typ. (at VGS = 10 V)
* Pb-free
* Halogen-free Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 1 234 5 D 4 1, 2, 3 S
