RJK0652DPB Silicon N Channel Power MOS FET

Renesas Technology

Description

RJK0652DPB 60V, 35A, 7.0m max.Silicon N Channel Power MOS FET Power Switching Preliminary Datasheet R07DS0077EJ0200 Rev.2.00 Apr 09, 2013 .
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

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Datasheet Specifications

Part number: RJK0652DPB
Manufacturer: Renesas ↗ Technology
File Size: 100.64 KB
Datasheet: RJK0652DPB-RenesasTechnology.pdf
Description: Silicon N Channel Power MOS FET

Features

* High speed switching
* Capable of 4.5 V gate drive
* Low drive current
* High density mounting
* Low on-resistance RDS(on) = 5.5 m typ. (at VGS = 10 V)
* Pb-free
* Halogen-free Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 1 234 5 D 4 1, 2, 3 S

Applications

* for each Renesas Electronics product depends on the product's quality grade, as indicated below. "Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; an

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