RJK0655DPB

Silicon N Channel Power MOS FET

Renesas Technology

RJK0655DPB Features

* High speed switching

* Low drive current

* Low on-resistance RDS(on) = 5.3 m typ. (at VGS = 10 V)

* Pb-free

* Halogen-free

* High density mounting Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 1 234 4 G Preliminary Datasheet R07DS1053EJ0200 (Previou

RJK0655DPB General Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesa.

RJK0655DPB Datasheet (146.82 KB)