RJK0655DPB - Silicon N Channel Power MOS FET

Renesas Technology

The RJK0655DPB by Renesas Technology is a Silicon N Channel Power MOS FET. Below is the official datasheet preview.

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RJK0655DPB Silicon N Channel Power MOS FET by Renesas Technology - Datasheet Preview — Official preview page of the **RJK0655DPB** Silicon N Channel Power MOS FET datasheet (Renesas Technology).

Datasheet Details

Part number	RJK0655DPB
Manufacturer	Renesas Technology
File Size	146.82 KB
Description	Silicon N Channel Power MOS FET
Datasheet	RJK0655DPB-RenesasTechnology.pdf
Additional preview pages of the RJK0655DPB datasheet.

RJK0655DPB Product details

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

Features

High speed switching.
Low drive current.
Low on-resistance RDS(on) = 5.3 m typ. (at VGS = 10 V).
Pb-free.
Halogen-free.
High density mounting Outline.

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Published: Aug 20, 2015 |