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RJK0655DPB Silicon N Channel Power MOS FET

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Description

RJK0655DPB 60V, 35A, 6.7m max.Silicon N Channel Power MOS FET Power Switching .
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

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Features

* High speed switching
* Low drive current
* Low on-resistance RDS(on) = 5.3 m typ. (at VGS = 10 V)
* Pb-free
* Halogen-free
* High density mounting Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 1 234 4 G Preliminary Datasheet R07DS1053EJ0200 (Previou

Applications

* for each Renesas Electronics product depends on the product's quality grade, as indicated below. "Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; an

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RJK0655DPB Silicon Channel Power MOS FET Renesas Technology
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