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RJK0629DPE N-Channel Power MOS FET

RJK0629DPE Description

RJK0629DPE 60V, 85A, 4.5m max.N Channel Power MOS FET High-Speed Switching Use .
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

RJK0629DPE Features

* VDSS: 60 V
* RDS(on): 4.5 m (Max)
* ID: 85 A Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) 4 123 1G Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-

RJK0629DPE Applications

* for each Renesas Electronics product depends on the product's quality grade, as indicated below. "Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; an

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N-Channel Power MOS FET Renesas
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