RJK0631JPD

Silicon N-Channel MOS FET

Renesas

RJK0631JPD Features

* For Automotive application

* Low on-resistance : RDS(on) = 12 mΩ typ.

* Capable of 4.5 V gate drive

* Low input capacitance: Ciss = 1350 pF typ

* AEC-Q101 compliant Outline RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S)) 4 123 1G Preliminary D

RJK0631JPD General Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesa.

RJK0631JPD Datasheet (96.97 KB)