RJK0630JPE

Silicon N-Channel MOS FET

Renesas

RJK0630JPE Features

* For Automotive application

* AEC-Q101 compliant

* Low on-resistance : RDS(on) = 6.2 mΩ typ.

* Capable of 4.5 V gate drive

* Low input capacitance : Ciss = 2100 pF typ. Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) 4 123 1G Abso

RJK0630JPE General Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesa.

RJK0630JPE Datasheet (109.25 KB)