RJK0602DPN-E0 N-Channel MOS FET

Renesas Technology

Description

RJK0602DPN-E0 N-Channel MOS FET 60 V, 100 A, 3.9 m .
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

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Datasheet Specifications

Part number: RJK0602DPN-E0
Manufacturer: Renesas ↗ Technology
File Size: 77.73 KB
Datasheet: RJK0602DPN-E0-RenesasTechnology.pdf
Description: N-Channel MOS FET

Features

* High speed switching
* Low drive current
* Low on-resistance RDS(on) = 3.1 m typ. (at VGS = 10 V)
* Package TO-220AB Outline RENESAS Package code: PRSS0004AG-A (Package name: TO-220AB) 4 123 1G Preliminary Datasheet R07DS0653EJ0200 Rev.2.00 Aug 24, 2012 2, 4 D 1. Gate 2. Drain

Applications

* for each Renesas Electronics product depends on the product's quality grade, as indicated below. "Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; an

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RJK0602DPN-E0 N-Channel MOS FET Renesas Technology

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