Datasheet4U Logo Datasheet4U.com

2SK4090 - MOSFET

Datasheet Summary

Description

The 2SK4090 is N-channel MOS FET device that

Features

  • a low on-state resistance and excellent switching characteristics, and designed for low voltage high current.

📥 Download Datasheet

Datasheet preview – 2SK4090

Datasheet Details

Part number 2SK4090
Manufacturer Renesas
File Size 312.09 KB
Description MOSFET
Datasheet download datasheet 2SK4090 Datasheet
Additional preview pages of the 2SK4090 datasheet.

📁 Similar Datasheet

  • 2SK409 - N-Channel MOSFET (Hitachi Semiconductor)
  • 2SK4091D - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • 2SK4091I - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • 2SK4092 - SWITCHING N-CHANNEL POWER MOSFET (NEC)
  • 2SK4094 - N-Channel Silicon MOSFET (Sanyo Semicon Device)
  • 2SK4094 - N-Channel Power MOSFET (ON Semiconductor)
  • 2SK4094 - N-Channel MOSFET (INCHANGE)
  • 2SK4096LS - N-Channel Silicon MOSFET (Sanyo Semicon Device)
  • 2SK4096LS - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • 2SK4096LS - N-Channel Power MOSFET (ON Semiconductor)
Other Datasheets by Renesas

Full PDF Text Transcription

Click to expand full text
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4090 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4090 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 6.0 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 11 mΩ MAX. (VGS = 4.5 V, ID = 30 A) • Low gate to drain charge QGD = 6 nC TYP. (VDD = 15 V, ID = 30 A) • 4.
Published: |