2SK4144 Datasheet - Renesas

N-CHANNEL POWER MOSFET

2SK4144 Features

* Low on-state resistance RDS(on)1 = 5.8 mΩ MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 7.3 mΩ MAX. (VGS = 4.5 V, ID = 35 A)

* Low input capacitance Ciss = 5500 pF TYP. (VDS = 10 V)

* Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltag

2SK4144 General Description

The 2SK4144 is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER 2SK4144-AZ Note 2SK4144-S12-AZ Note LEAD PLATING Sn-Ag-Cu PACKING Vinyl bag 200 p/bag Tube 50 p/tube Note Pb-free (This product does not contain Pb in the exte.

2SK4144 Datasheet (261.41 KB)