Part number:
2SK4202
Manufacturer:
File Size:
329.19 KB
Description:
N-channel power mosfet.
* Low on-state resistance RDS(on) = 7.5 mΩ MAX. (VGS = 10 V, ID = 42 A)
* Low input capacitance Ciss = 6300 pF TYP. (VDS = 10 V) ORDERING INFORMATION PART NUMBER 2SK4202-S19-AY Note LEAD PLATING Pure Sn (Tin) PACKING Tube 50 p/tube Note Pb-free (This product does not contain Pb
2SK4202
329.19 KB
N-channel power mosfet.
📁 Related Datasheet
2SK420 - Silicon N-Channel MOSFET
(Toshiba)
:
i
SILICON N CHANNEL MPS TYPE (7T-MOS)
HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS.
SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPL.
2SK4200LS - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
2SK4200LS
FEATURES ·Drain Current : ID= 4.0A@ TC=25℃ ·Drain Source Voltage
: VDSS= 650V(Min) ·Static Drain-Source On.
2SK4200LS - N-Channel Silicon MOSFET
(Sanyo Semicon Device)
Ordering number : ENA1333
2SK4200LS
SANYO Semiconductors
DATA SHEET
2SK4200LS
Features
• • • •
N-Channel Silicon MOSFET
General-Purpose Switchin.
2SK4201 - N-CHANNEL POWER MOSFET
(Renesas)
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK4201
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION The 2SK4201 is N-channel MOS Field Effect Transistor des.
2SK4201 - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
2SK4201
FEATURES ·Drain Current : ID= 80A@ TC=25℃ ·Drain Source Voltage
: VDSS= 100V(Min) ·Static Drain-Source On-Re.
2SK4202 - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
2SK4202
FEATURES ·Drain Current : ID= 84A@ TC=25℃ ·Drain Source Voltage
: VDSS= 60V(Min) ·Static Drain-Source On-Res.
2SK4203LS - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
2SK4203LS
FEATURES ·Drain Current : ID= 18A@ TC=25℃ ·Drain Source Voltage
: VDSS= 45V(Min) ·Static Drain-Source On-R.
2SK4203LS - N-Channel Silicon MOSFET
(Sanyo Semicon Device)
Ordering number : ENA1289
2SK4203LS
SANYO Semiconductors
DATA SHEET
2SK4203LS
Features
• •
N-Channel Silicon MOSFET
General-Purpose Switching De.
