* . High Breakdown Voltage : V(br)dss= 400V . High Forward Transfer Admittance : lYf s l=2.5S (Typ.) . Low Leakage Current : LGSS=i100nA(Max. ) @ Vgs=±20V . Enhancement -Mode IDS S= 1mA (Max.) @ VdS=400V : Vth= l- 5~ 3. 5V @ lD=lmA MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Drain-Source Voltage G
2SK420
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Silicon n-channel mosfet.
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SILICON N CHANNEL MPS TYPE (7T-MOS)
HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS.
SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPL.
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