2SK420 - Silicon N-Channel MOSFET
2SK420 Features
* . High Breakdown Voltage : V(br)dss= 400V . High Forward Transfer Admittance : lYf s l=2.5S (Typ.) . Low Leakage Current : LGSS=i100nA(Max. ) @ Vgs=±20V . Enhancement -Mode IDS S= 1mA (Max.) @ VdS=400V : Vth= l- 5~ 3. 5V @ lD=lmA MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Drain-Source Voltage G
