2SK4207 Datasheet - Toshiba Semiconductor

2SK4207 MOSFET

2SK4207 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV) 2SK4207 Swiching Regulator Applications 15.9max. Ф3.2±0.2 1.0 4.5 9.0 4.8max. 1 2 3 Unit: mm z Low drain source ON-resistance: RDS (ON) = 0.78 Ω (typ.) z High forward transfer admittance:|Yfs| = 11 S (typ.) z Low leakage current: IDSS = 100 μA (max) (VDS = 720 V) 2.0 3.3max. 1.0 －0.25 ＋0.3 Characteristics Drain source voltage Drain gate voltage (RGS = 20 kΩ) Gate source voltage Dr.

2SK4207 Features

* IONS.

* PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPAC

2SK4207-ToshibaSemiconductor.pdf