5N3011
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N-channel mosfet.
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5N3011P - N-Channel MOSFET
(Renesas)
H5N3011P
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance • Low leakage current • High speed switching
Outline
TO-3P.
5N30 - N-Channel MOSFET Transistor
(Inchange Semiconductor)
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
5N30
·DESCRIPTION ·Drain Current ID= 5A@ TC=25℃ ·Drain Source Volta.
5N0431 - Power-Transistor
(Infineon)
IPZ40N04S5-3R1
OptiMOS™-5 Power-Transistor
Product Summary
Features • OptiMOS™ - power MOSFET for automotive applications
VDS RDS(on),max ID
40 V.
5N100-FC - N-CHANNEL MOSFET
(UTC)
UNISONIC TECHNOLOGIES CO., LTD
5N100-FC
5A, 1000V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 5N100-FC provide excellent RDS(ON), low gate charge and.
5N10029 - Automotive MOSFET
(Infineon)
IAUA180N10S5N029
Automotive MOSFET
OptiMOS™-5 Power-Transistor
Features
• OptiMOS™ power MOSFET for automotive applications • N-channel – Enhancement.
5N105K5 - N-channel Power MOSFET
(STMicroelectronics)
STF5N105K5
N-channel 1050 V, 2.9 Ω typ., 3 A MDmesh™ K5 Power MOSFET in a TO-220FP package
Datasheet - production data
Figure 1: Internal schematic .
5N120 - N-CHANNEL MOSFET
(UTC)
UNISONIC TECHNOLOGIES CO., LTD
5N120
5A, 1200V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 5N120 provide excellent RDS(ON), low gate charge and opera.
5N120-E3 - N-CHANNEL POWER MOSFET
(UTC)
UNISONIC TECHNOLOGIES CO., LTD
5N120-E3
Preliminary
5.0A, 1200V N-CHANNEL POWER MOSFET
1
DESCRIPTION
The UTC 5N120-E3 provide excellent RDS(ON).
5N150UF - SGF5N150UF
(Fairchild Semiconductor)
SGF5N150UF
IGBT
SGF5N150UF
General Description
Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. .
5N20A - MOSFET
(GOFORD)
GOFORD
Description
Features
VDSS RDS(ON)
ID
@ 10V(Typ)
200V
0.44 Ω
5A
• Fast switching • 100% avalanche tested • Improved dv/dt capability • Ro.
