5N3011P - N-Channel MOSFET

Datasheet Summary

Features

Low on-resistance.
Low leakage current.
High speed switching Outline TO-3P D G S 1 2 3 Absolute Maximum Ratings Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Body-Drain diode reverse Drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C.

Renesas

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Datasheet Details

Part number	5N3011P
Manufacturer	Renesas
File Size	108.56 KB
Description	N-Channel MOSFET
Datasheet	5N3011P Datasheet
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5N3011 - N-Channel MOSFET

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H5N3011P Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • Low leakage current • High speed switching Outline TO-3P D G S 1 2 3 Absolute Maximum Ratings Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Body-Drain diode reverse Drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID ID Note1 (pulse) IDR IDR Note1 (pulse) IAPNote3 EARNote3 Pch Note2 θch-c Tch Tstg REJ03G0385-0200 Rev.2.00 Aug.05.2004 1. Gate 2. Drain (Flange) 3.

Published: Dec 19, 2015 |