HRC0103C
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Silicon schottky barrier diode.
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HRC0103A - Silicon Schottky Barrier Diode
(Hitachi Semiconductor)
HRC0103A
Silicon Schottky Barrier Diode for Rectifying
ADE-208-624 (Z) Rev 0 May. 1998 Features
• Low forward voltage drop and suitable for high effi.
HRC0202A - Silicon Schottky Barrier Diode
(Renesas Technology)
HRC0202A
Silicon Schottky Barrier Diode for Rectifying
REJ03G0147-0600Z (Previous: ADE-208-210E) Rev.6.00 Nov.26.2003
Features
• Low forward voltage .
HRC0203B - Silicon Schottky Barrier Diode
(Hitachi Semiconductor)
HRC0203B
Silicon Schottky Barrier Diode for Rectifying
ADE-208-800(Z) Rev 0 June. 1999 Features
• Low forward voltage drop and suitable for high effi.
HRC0203C - Silicon Schottky Barrier Diode
(Renesas Technology)
To all our customers
Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
Th.
HR-CR3A - 5A to 16A low-profile power relay
(HanKuk)
HR-CR3A HR
5A to 16A low-profile power relay
RoHS
P.C. BOARD POWER RELAY
Features
5mm lower in height than HR-CR3 series Wide contact arrangements .
HR-CR3N23 - 5A Power Relay
(HanKuk)
.
HR-CR7 - 10A High isolation structure Relay
(HanKuk)
HR-CR7
RoHS 대응품
Slim 1a, 10A High isolation structure Relay
특징
- 절연벽 구조로 Noise에 강함 - 접점과 코일 사이에 높은 절연 저항 : 10,000V
연면거리 및 공간거리 : 6mm - 높은 유입 전류 용량 .
HR-CR7DC05 - 10A High isolation structure Relay
(HanKuk)
HR-CR7
RoHS 대응품
Slim 1a, 10A High isolation structure Relay
특징
- 절연벽 구조로 Noise에 강함 - 접점과 코일 사이에 높은 절연 저항 : 10,000V
연면거리 및 공간거리 : 6mm - 높은 유입 전류 용량 .
HR-CR7DC06 - 10A High isolation structure Relay
(HanKuk)
HR-CR7
RoHS 대응품
Slim 1a, 10A High isolation structure Relay
특징
- 절연벽 구조로 Noise에 강함 - 접점과 코일 사이에 높은 절연 저항 : 10,000V
연면거리 및 공간거리 : 6mm - 높은 유입 전류 용량 .
HR-CR7DC09 - 10A High isolation structure Relay
(HanKuk)
HR-CR7
RoHS 대응품
Slim 1a, 10A High isolation structure Relay
특징
- 절연벽 구조로 Noise에 강함 - 접점과 코일 사이에 높은 절연 저항 : 10,000V
연면거리 및 공간거리 : 6mm - 높은 유입 전류 용량 .
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