PF08122B Datasheet - Renesas

PF08122B MOS FET Power Amplifier Module

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other H.

PF08122B Features

* All in one including output matching circuit

* Simple external circuit

* Simple power control

* High gain 3stage amplifier : 0 dBm input Typ

* Lead less thin & Small package : 8 × 13.75 × 1.6 mm Typ

* High efficiency : 55% Typ at 35.0 dBm for E-GSM 5

PF08122B Datasheet (171.37 KB)