Datasheet4U Logo Datasheet4U.com

PF08122B - MOS FET Power Amplifier Module

PF08122B Description

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.Th.

PF08122B Features

* All in one including output matching circuit
* Simple external circuit
* Simple power control
* High gain 3stage amplifier : 0 dBm input Typ
* Lead less thin & Small package : 8 × 13.75 × 1.6 mm Typ
* High efficiency : 55% Typ at 35.0 dBm for E-GSM 5

📥 Download Datasheet

Preview of PF08122B PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • PF08103A - MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone (Hitachi Semiconductor)
  • PF08103B - MOS FET Power Amplifier (Hitachi Semiconductor)
  • PF08107B - MOS FET Power Amplifier (Hitachi Semiconductor)
  • PF08109B - MOS FET Power Amplifier Module (Hitachi)
  • PF08109B-TB - Micro Module Specifications (Samsung Electronics)
  • PF08134B - MOS FET Power Amplifier Module (Renesas Technology)
  • PF0010 - High Frequency Power MOS FET Module (Renesas Technology)
  • PF00105A - MOS FET Power Amplifier Module for AMPS Handy Phone (Hitachi Semiconductor)

📌 All Tags

MOS FET Power Amplifier Module Renesas
Renesas PF08122B-like datasheet

PF08122B Stock/Price