* All in one including output matching circuit
* Simple external circuit
* Simple power control
* High gain 3stage amplifier : 0 dBm input Typ
* Lead less thin & Small package : 8 × 13.75 × 1.6 mm Typ
* High efficiency : 55% Typ at 35.0 dBm for E-GSM 5
PF08122B Datasheet (171.37 KB)
PF08122B
171.37 KB
Mos fet power amplifier module.
To all our customers
Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
Th.
📁 Related Datasheet
PF08127B MOS FET Power Amplifier Module (Renesas)
PF08103A MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone (Hitachi Semiconductor)
PF08103B MOS FET Power Amplifier (Hitachi Semiconductor)
PF08107B MOS FET Power Amplifier (Hitachi Semiconductor)
PF08109B MOS FET Power Amplifier Module (Hitachi)
PF08109B-TB Micro Module Specifications (Samsung Electronics)
PF08114B MOS FET Power Amplifier Module (Renesas)
PF08134B MOS FET Power Amplifier Module (Renesas Technology)
PF0010 High Frequency Power MOS FET Module (Renesas Technology)
PF00105A MOS FET Power Amplifier Module for AMPS Handy Phone (Hitachi Semiconductor)
