PF08107B Datasheet - Hitachi Semiconductor

PF08107B MOS FET Power Amplifier

PF08107B Features

* 2 in / 2 out dual band amplifier

* Simple external circuit including output matching circuit

* One power control pin with one band switch

* High gain 3stage amplifier : 0 dBm input Typ

* Lead less thin & Small package : 8 × 13.75 × 1.6 mm Typ

* High

Datasheet Details

PF08107B

Hitachi Semiconductor

168.37 KB

Mos fet power amplifier.

📁 Related Datasheet

PF08103A MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone (Hitachi Semiconductor)

PF08103B MOS FET Power Amplifier (Hitachi Semiconductor)

PF08109B MOS FET Power Amplifier Module (Hitachi)

PF08109B-TB Micro Module Specifications (Samsung Electronics)

PF08114B MOS FET Power Amplifier Module (Renesas)

PF08122B MOS FET Power Amplifier Module (Renesas)

PF08127B MOS FET Power Amplifier Module (Renesas)

PF08134B MOS FET Power Amplifier Module (Renesas Technology)

TAGS

PF08107B Distributor