Datasheet4U Logo Datasheet4U.com

PF08109B - MOS FET Power Amplifier Module

PF08109B Description

PF08109B MOS FET Power Amplifier Module for E-GSM and DCS1800 Dual Band Handy Phone ADE-208-821B (Z) 3rd Edition Mar.2000 Application * Dual.

PF08109B Features

* 2 in / 2 out dual band amplifire Simple external circuit including output matching circuit High gain 3stage amplifier : 0 dBm input Typ Lead less thin & Small package : 11 × 13.75 × 1.8 mm Typ High efficiency : 50% Typ at nominal output power for E-G

📥 Download Datasheet

Preview of PF08109B PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
PF08109B
Manufacturer
Hitachi
File Size
30.77 KB
Datasheet
PF08109B_Hitachi.pdf
Description
MOS FET Power Amplifier Module

📁 Related Datasheet

  • PF08109B-TB - Micro Module Specifications (Samsung Electronics)
  • PF08103A - MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone (Hitachi Semiconductor)
  • PF08103B - MOS FET Power Amplifier (Hitachi Semiconductor)
  • PF08107B - MOS FET Power Amplifier (Hitachi Semiconductor)
  • PF08114B - MOS FET Power Amplifier Module (Renesas)
  • PF08122B - MOS FET Power Amplifier Module (Renesas)
  • PF08127B - MOS FET Power Amplifier Module (Renesas)
  • PF08134B - MOS FET Power Amplifier Module (Renesas Technology)

📌 All Tags

Hitachi PF08109B-like datasheet

PF08109B Stock/Price