PS2535-1 NPN silicon Darlington-connected phototransistor

Renesas

Description

PS2535-1, PS2535L-1 HIGH COLLECTOR TO EMITTER VOLTATGE HIGH ISOLATION VOLTAGE Data Sheet R08DS0199EJ0101 Rev.1.01 Nov 4, 2022 .
The PS2535-1 and PS2535L-1 are optically coupled isolator containing a GaAs light emitting diode and an NPN silicon Darlington-connected phototransist.

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Datasheet Specifications

Part number: PS2535-1
Manufacturer: Renesas ↗
File Size: 291.59 KB
Datasheet: PS2535-1-Renesas.pdf
Description: NPN silicon Darlington-connected phototransistor

Features

* High collector to emitter voltage (VCEO = 350 V)
* High isolation voltage (BV = 5 000 Vr. m. s. )
* High current transfer ratio (CTR = 1 500 % TYP. )
* Embossed tape product: PS2535L-1-F3: 2 000 pcs/reel
* Pb-free product
* Safety standards
* UL

Applications

* Telephone, Exchange equipment
* FAX/MODEM R08DS0199EJ0101 Rev.1.01 Nov 4, 2022 Page 1 of 14 PS2535-1, PS2535L-1 PACKAGE DIMENSIONS (UNIT: mm) DIP Type PS2535-1 4.6±0.35 43 12 7.62 6.5±0.5 3.2±0.4 4.15±0.4 3.5±0.3 1.25±0.15 0 to 15° 0.25 +0.1
* 0.05 0.50±0.10 0.25

PS2535-1 Distributors

📁 Related Datasheet

PS2535-2 PS2535-4 PS2535L-1 PS2535L-2 PS2535L-4 PS2532-1

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PS2535-1 NPN silicon Darlington-connected phototransistor Renesas

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