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PS2535-1

NPN silicon Darlington-connected phototransistor

PS2535-1 Features

* High collector to emitter voltage (VCEO = 350 V)

* High isolation voltage (BV = 5 000 Vr.m.s.)

* High current transfer ratio (CTR = 1 500 % TYP.)

* Embossed tape product: PS2535L-1-F3: 2 000 pcs/reel

* Pb-free product

* Safety standards

* UL

PS2535-1 General Description

The PS2535-1 and PS2535L-1 are optically coupled isolator containing a GaAs light emitting diode and an NPN silicon Darlington-connected phototransistor. High isolation voltage between the I/O, the high voltage between the collector and emitter of the transistor, and Darlington transistor output ena.

PS2535-1 Datasheet (291.59 KB)

Preview of PS2535-1 PDF

Datasheet Details

Part number:

PS2535-1

Manufacturer:

Renesas ↗

File Size:

291.59 KB

Description:

Npn silicon darlington-connected phototransistor.

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TAGS

PS2535-1 NPN silicon Darlington-connected phototransistor Renesas

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